Intrinsic and radiation-induced defects in silica and germania glasses
Thermally stimulated polarization and depolarization current (TSPC/TSDC) measurements were conducted on GeO/sub 2/ and SiO/sub 2/ glasses to investigate their defect properties and mechanisms of charge transport. The TSPC data of these glasses were found to be their D.C. conductivity. One TSDC peak was observed in GeO/sub 2/ and SiO/sub 2/ (Spectrosil) glasses. Spectrosil-WF (silica glass specially treated to reduce its water content) exhibited two TSDC peaks. The only TSDC peak in GeO/sub 2/ and Spectrosil glasses and the low-temperature TSDC peak in Spectrosil-WF are ascribed to the orientation polarization of intrinsic defects labeled as Intimate Valence Alternation Pairs (IVAP's). The origin of the high-temperature TSDC peak in Spectrosil-WF is uncertain. TSPC/TSDC measurements were also conducted on lead silicate glasses with and without halogen ions to investigate the role of halogen ions in the charge-transport processes. Transport in the binary glasses attributed to the lead ions. Two TSDC peaks have been observed in the binary lead silicate glasses. The low-temperature TSDC peak in these glasses in ascribed to short-range movement of lead ions and the high-temperature peak is attributed to space-charge polarization due to lead-ion motion.
- Research Organization:
- Vanderbilt Univ., Nashville, TN (USA)
- OSTI ID:
- 6367350
- Country of Publication:
- United States
- Language:
- English
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360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
CHALCOGENIDES
CHARGE TRANSPORT
DEFECTS
GERMANIUM COMPOUNDS
GERMANIUM OXIDES
GLASS
LEAD COMPOUNDS
LEAD SILICATES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SILICATES
SILICON COMPOUNDS
SILICON OXIDES