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Exploiting the memory hierarchy in sequential and parallel sparse Cholesky factorization

Technical Report ·
OSTI ID:6363278
Cholesky factorization of large sparse matrices is an extremely important computation, arising in a wide range of domains including linear programming, finite element analysis, and circuit simulation. This thesis investigates crucial issues for obtaining high performance for this computation on sequential and parallel machines with hierarchical memory systems. The thesis begins by providing the first thorough analysis of the interaction between sequential sparse Cholesky factorization methods and memory hierarchies. The authors look at popular existing methods and find that they produce relatively poor memory hierarchy performance. The methods are extended, using blocking techniques, to reuse data in the fast levels of the memory hierarchy. This increased reuse is shown to provide a three-fold speedup over popular existing approaches (e.g., SPARSPAK) on modem workstations. The thesis then considers the use of blocking techniques in parallel sparse factorization. The authors first describe parallel methods we have developed that are natural extensions of the sequential approach described above. These methods distribute panels (sets of contiguous columns with nearly identical non-zero structures) among the processors. The thesis shows that for small parallel machines, the resulting methods again produce substantial performance improvements over existing methods. A framework is provided for understanding the performance of these methods, and also for understanding the limitations inherent in them. Using this framework, the thesis shows that panel methods are inappropriate for large-scale parallel machines because they do not expose enough concurrency.... Hierarchical-memory machines, Sparse Cholesky factorization, Parallel processing.
Research Organization:
Stanford Univ., CA (United States). Dept. of Computer Science
OSTI ID:
6363278
Report Number(s):
AD-A-262849/3/XAB; STAN-CS--92-1459; CNN: N00039-91-C-0138; N00014-87-K-0828
Country of Publication:
United States
Language:
English