Picosecond dynamics of a gain-switched InGaAsP laser
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
Optical pulses are observed, with subpicosecond resolution, from an InGaAsP laser driven with 17 ps wide electrical pulses. The temporal profile of these gain-switched pulses is analyzed to obtain the transient and steady-state injected carrier densities in the active layer for dc biases above and below threshold. Gain-switched pules as short as 13 ps FWHM are presented, and empirical results are compared to computer simulations. The implications of these results to pulse code modulation at very high bit rates are also discussed.
- Research Organization:
- AT and T Bell Labs., Holmdel, NJ 07733
- OSTI ID:
- 6361835
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COMPUTERIZED SIMULATION
CURRENTS
DIRECT CURRENT
DYNAMICS
ELECTRIC CURRENTS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MECHANICS
MODULATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIMULATION
STEADY-STATE CONDITIONS
THRESHOLD CURRENT
TRANSIENTS
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COMPUTERIZED SIMULATION
CURRENTS
DIRECT CURRENT
DYNAMICS
ELECTRIC CURRENTS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MECHANICS
MODULATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSES
Q-SWITCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIMULATION
STEADY-STATE CONDITIONS
THRESHOLD CURRENT
TRANSIENTS