In-plane magnetoresistance studies of an extremely coupled double quantum well
- Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
We investigate the transport properties of an extremely-coupled Al{sub x}Ga{sub 1{minus}x}As/GaAs double quantum well subject to in-plane magnetic fields B{sub {parallel}}. The coupling is sufficiently strong that the symmetric-antisymmetric gap energy {Delta}{sub SAS} is larger than the Fermi energy E{sub F}. Thus for all B{sub {parallel}} only the lower-energy dispersion branch is occupied. In contrast to systems where {Delta}{sub SAS}{lt}E{sub F}, we find: (1) only a single feature in the magnetoresistance, a maximum; (2) a monotonic increase in the cyclotron mass to roughly double the GaAs band mass; and (3) a monotonically increasing Fermi-surface orbit area. These experimental results agree well with our theoretical calculations. thinsp {copyright} {ital 1998} {ital The American Physical Society}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 636171
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 57; ISSN 0163-1829; ISSN PRBMDO
- Country of Publication:
- United States
- Language:
- English
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