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Title: HDR reservoir flow impedance and potentials for impedance reduction

Conference ·
OSTI ID:6359882

The data from flow tests which employed two different production zones in a well at Fenton Hill indicates the flow impedance of a wellbore zone damaged by rapid depressurization was altered, possibly by pressure spallation, which appears to have mechanically propped the joint apertures of outlet flow paths intersecting the altered wellbore. The rapid depressurization and subsequent flow test data derived from the damaged well has led to the hypothesis that pressure spallation and the resultant mechanical propping of outlet flow paths reduced the outlet flow impedance of the damaged wellbore. Furthermore, transient pressure data shows the largest pressure drop between the injection and production wellheads occurs near the production wellbore, so lowering the outlet impedance by increasing the apertures of outlet flow paths will have the greatest effect on reducing the overall reservoir impedance. Fenton Hill data also reveals that increasing the overall reservoir pressure dilates the apertures of flow paths, which likewise serves to reduce the reservoir impedance. Data suggests that either pressure dilating the wellbore connected joints with high production wellhead pressure, or mechanically propping open the outlet flow paths will increase the near-wellbore permeability. Finally, a new method for calculating and comparing near-wellbore outlet impedances has been developed. Further modeling, experimentation, and engineered reservoir modifications, such as pressure dilation and mechanical propping, hold considerable potential for significantly improving the productivity of HDR reservoirs.

Research Organization:
Los Alamos National Lab., NM (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
6359882
Report Number(s):
LA-UR-93-1698; CONF-930121-4; ON: DE93014447
Resource Relation:
Conference: 18. annual workshop on geothermal reservoir engineering, Stanford, CA (United States), 26-28 Jan 1993
Country of Publication:
United States
Language:
English