Carrier lifetime measurements in silicon wafers
A contactless rf technique has been developed for measuring the minority carrier lifetime in silicon wafers from the photoconductivity decay. Surface recombination plays a dominant role in the measured decay time for typical wafer thickness (10-20 mils). For HF:HCOOH:HNO/sub 3/ etched surfaces, the best fit to the data is obtained with a surface recombination velocity of 10/sup 5/ cm/sec. The surface contribution depends on wafer thickness and carrier mobility as well as on surface recombination center density. Experimental results on the effect of surface passivation with TiO/sub 2/ on the surface recombination velocity and on the role of dopant concentration in the bulk recombination lifetime are discussed.
- Research Organization:
- Exxon Research an Engineering Co., Linden, NJ
- OSTI ID:
- 6340826
- Report Number(s):
- CONF-8305161-
- Journal Information:
- Proc. - Electrochem. Soc.; (United States), Journal Name: Proc. - Electrochem. Soc.; (United States) Vol. 83-11; ISSN PESOD
- Country of Publication:
- United States
- Language:
- English
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36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CARRIER DENSITY
CARRIER LIFETIME
CARRIER MOBILITY
CHALCOGENIDES
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
LAYERS
LIFETIME
MEASURING METHODS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RECOMBINATION
SEMIMETALS
SILICON
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS