Spin-dependence of the electron scattering cross section by a magnetic layer system and the magneto-resistance
- Southern Univ. and A and M College, Baton Rouge, LA (United States). Physics Dept.
The authors present a theoretical model for calculating the spin-dependent cross section of the scattering of electrons by a magnetic layer system. The model demonstrates that the cross sections of the scattering are different for spin up and spin down electrons. The model assumes that the electrical resistivity in a conductor is proportional to the scattering cross section of the electron in it. It is believed to support the two channel mechanism in interpreting magneto-resistance (MR). Based on the model without considering the scattering due to the interfacial roughness and the spin flipping scattering, the authors have established a relationship between MR and the square of the magnetic moment in the bulk sample without considering the scattering due to the interfacial roughness and the spin flipping scattering. It can also qualitatively explain the MR difference between the current in plane (CIP) and current perpendicular to the plane (CPP) configurations. The predictions by the model agree well with the experimental findings.
- OSTI ID:
- 6336574
- Report Number(s):
- CONF-980291-; CODEN: IJPBEV
- Journal Information:
- International Journal of Modern Physics B, Vol. 12:29-31; Conference: 1. international conference on new theories, discoveries, and applications of superconductors and related materials, Baton Rouge, LA (United States), 19-24 Feb 1998; ISSN 0217-9792
- Country of Publication:
- United States
- Language:
- English
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