Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cells

Journal Article · Fri Oct 31 23:00:00 EST 1986 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1986.22744· OSTI ID:6336420

Dimitriadis, C A

A method based on the spectral response of polycrystalline semiconductor photovoltaic cells for evaluation of the grain boundary recombination velocity is presented. The wavelength of the maximum of the spectral response, for a polycrystalline semiconductor with known grain size, depends on the recombination velocity. By comparison of the experimental with the theoretical wavelength of the maximum of the spectral response, it is possible to determine the grain boundary recombination velocity.

• Research Organization: Dept. of Physics, Univ. of Thessaloniki, Thessaloniki
• OSTI ID: 6336420
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-33:11; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
GRAIN BOUNDARIES
GRAIN SIZE
MICROSTRUCTURE
PHASE VELOCITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
RECOMBINATION
RESEARCH PROGRAMS
SCHOTTKY BARRIER SOLAR CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SIZE
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE
VELOCITY
WAVELENGTHS