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Electron attachment to p-benzoquinone and photodetachment from benzoquinone anion in nonpolar solvents. [Pulse radiolysis followed by second pulse from tunable dye laser occurring after a delay of 10 to 200. mu. s]

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100215a011· OSTI ID:6335932
Although p-benzoquinone has a high electron affinity (1.9 eV), its reaction with excess electrons exhibits an unusual solvent and temperature dependence. The reaction is fast and has a positive activation energy in n-pentane but is much slower and has a negative activation energy in Si(CH/sub 3/)/sub 4/, neopentane, and 2,2,4,4-tetramethylpentane. The results can be explained in terms of an equilibrium with a short-lived excited state of the anion: e/sup -/ + benzoquinone reversible benzoquinone(-)*. The attachment rate is fast in all solvents. The reverse, autodetachment from the excited anion, is characterized by an activation energy, which depends on the value of V/sub 0/, the energy level of the electron in the liquid. For Si(CH/sub 3/)/sub 4/ for which V/sub 0/ is the lowest (-0.55 eV), the activation energy is 5.7 kcal/mol. As V/sub 0/ increases, the activation energy increases and is 9.4 kcal/mol in 2,2,4,4-tetramethylpentane for which V/sub 0/ = -0.35 eV. When V/sub 0/ is close to zero, as in n-pentane, the activation energy is so large that detachment from the excited anion state is too slow to compete with deactivation and a fast diffusion-controlled forward rate is observed. The spectrum of benzoquinone anion as observed by the laser photodetachment technique is reported, and the threshold for photodetachment is found to be 2.32 eV in Si(CH/sub 3/)/sub 4/ and 2.58 eV in 2,2,4-trimethylpentane. The quantum yield of photodetachment reaches a maximum value at 480 nm in Si(CH/sub 3/)/sub 4/. 6 figures, 2 tables.
Research Organization:
Brookhaven National Lab., Upton, NY
OSTI ID:
6335932
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 86:18; ISSN JPCHA
Country of Publication:
United States
Language:
English

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