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Pb-doped Bi-Sr-Ca-Cu-O thin films

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101401· OSTI ID:6335728
We prepared Pb-doped Bi-Sr-Ca-Cu-O thin films by rf-magnetron sputtering with multiple targets. A Bi/sub 2/O/sub 3/ target compensated for lack of Bi and a PbO target was used to dope Pb into films in sufficient quantity. In thin films, Pb evaporates easily during sintering. We prepared heavily Pb-doped films and they exhibited zero resistance at 94.5 K with sintering as short as 10 min. After 1 h of sintering, more than half of the Pb evaporated and the film showed a sharp transition to its superconducting state. T/sub c//sub e/ was 106.5 K. Pb doping promotes high T/sub c/ phase formation; however, the high T/sub c/ phase does not always have to contain Pb.
Research Organization:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
OSTI ID:
6335728
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:14; ISSN APPLA
Country of Publication:
United States
Language:
English