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U.S. Department of Energy
Office of Scientific and Technical Information

Development of photoelectrochemical cells based on compound semiconductors and nonaqueous electrolytes. Final report, May 1, 1979-April 30, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6335525· OSTI ID:6335525
Factors limiting the performance of nonaqueous photoelectrochemical cells (EPCs) have been delineated for a model photoelectrode, n-GaAs, in a variety of solvent-electrolyte combinations. Although a wider range of stabilizing redox systems can be identified in nonaqueous solvents than in H/sub 2/O, the lack of specific adsorption of the redox systems still limits maximum open circuit voltages to <0.7V. Because of solubility and electrolyte conductivity is found to be the CH/sub 3/CN, I/sub 3//sup -//I/sup -/ system for n-GaAs. EPCs using this electrolyte have been characterized in detail. Development of less optically dense electrolytes is also being pursued. Truly anhydrous solutions of Cu and Cr perchlorates have been formed by in situ anodic dissolution of the parent metals. A parallel study of thin film photoelectrode structures has been conducted to demonstrate nonvacuum deposition methods: screen printing, electroless chemical plating, and electrochemical plating of Cd chalcogenides.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); EIC Labs., Inc., Newton, MA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6335525
Report Number(s):
SERI/TR-8002-7-T2; ON: DE81025647
Country of Publication:
United States
Language:
English