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Growth modes of vapor-deposited bismuth on a Cu(110) surface

Journal Article · · J. Chem. Phys.; (United States)
DOI:https://doi.org/10.1063/1.456284· OSTI ID:6335221
The interactions of vapor-deposited Bi with Cu(110) have been studied with x-ray photoelectron spectroscopy (XPS), thermal desorption mass spectroscopy (TDS), and low-energy electron diffraction (LEED). There is a net repulsive Bi--Bi interaction in the adlayer such that the heat of adsorption decreases from /similar to/69 to 51 kcal/mol as theta/sub Bi/ increases from /similar to/0.3 to /similar to/0.7. At low coverages (i.e., long Bi--Bi distances), this repulsive interaction is relatively isotropic, with the Bi forming a quasihexagonal c(2 x 2) adlayer. At high coverages (i.e., short Bi--Bi distances), the effective Bi--Bi interaction potential is very anisotropic, wherein there are Bi--Bi repulsions parallel to the troughs of the Cu(110) surface, but Bi--Bi attractions across these troughs. This leads to p(n x 1) overlayer structures up to completion of the monolayer. Systematic trends in the structural growth modes for metal adlayers showing net repulsive lateral interactions on one-dimensionally corrugated substrates are analyzed. It is found that three types of growth modes can be predicted depending upon a size parameter (the ratio of the metallic diameter of the adatom to the trough--trough separation of the substrate) and the nature of the substrate (fcc vs bcc).
Research Organization:
Chemistry Department, Indiana University, Bloomington, Indiana 47405
OSTI ID:
6335221
Journal Information:
J. Chem. Phys.; (United States), Journal Name: J. Chem. Phys.; (United States) Vol. 90:11; ISSN JCPSA
Country of Publication:
United States
Language:
English

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