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Nb/PbBi SIS mixer elements for millimeter-wave applications

Thesis/Dissertation ·
OSTI ID:6331782
A relatively new approach to millimeter-wave mixing utilizes the highly nonlinear single-electron tunneling characteristic of superconductor-insulator-superconductor (SIS) tunnel junctions. SIS mixers offer considerable advantages over conventional mixers in many areas of millimeter-wave radiometry. They generally require a local oscillator power several orders of magnitude lower than Schottky-diode mixers. They have also demonstrated the possibility of a conversion gain and a mixer noise temperature approaching the quantum limit. This document presents the development of an edge-contact SIS device incorporating niobium and a lead/bismuth alloy as the super-conducting materials. Detailed theoretical analysis of this structure is presented, as well as the complete details of several fabrication technologies developed during the course of this work. This includes a novel technique for the fabrication of devices with an aluminum oxide dielectric layer.
Research Organization:
Virginia Univ., Charlottesville (USA)
OSTI ID:
6331782
Country of Publication:
United States
Language:
English