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Influence of silicon on void nucleation in irradiated alloys

Conference ·
OSTI ID:6325426

The addition of silicon to pure nickel, Ni-Cr alloys and Fe-Ni-Cr alloys raises the diffusivity of each of the alloy components. The resultant increase in the effective vacancy diffusion coefficient causes large reductions in the nucleation rate of voids during irradiation. This extends the transient regime of swelling, which is controlled not only by the amount of silicon in solution but also by the precipitation kinetics of precipitates rich in nickel and silicon.

Research Organization:
Missouri Univ., Rolla (USA); Hanford Engineering Development Lab., Richland, WA (USA)
DOE Contract Number:
AC06-76FF02170
OSTI ID:
6325426
Report Number(s):
HEDL-SA-3152-FP; CONF-841246-4; ON: DE85003014
Country of Publication:
United States
Language:
English