Accurate analysis of dc electrical characteristics of 1. 3. mu. m DCPBH laser diodes
An equivalent circuit for the 1.3 ..mu..m DCPBH laser diode is presented. The modeling is based on device geometry, measurements on isolated junctions, and transistor theory. In spite of its simplicity the model is capable of simulating several measured characteristics. Among the latter are, e.g., the (small) forward bias on the central p-n of the p-n-p-n blocking structure, the possibility of parasitic thyristor breakover, saturation of the leakage to the lateral quaternary regions around laser threshold, and the strong temperature dependence of the leakage through the p-n-p-n blocking structure as dominated by n-p-n transistor action. Quantitative and simultaneous agreement is found between simulated and measured leakage current curves and their corresponding light output versus current curves at various temperatures.
- Research Organization:
- Philips Research Labs., 5600 JA Eindhoven
- OSTI ID:
- 6319061
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ACCURACY
CURRENTS
DIAGRAMS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EQUIVALENT CIRCUITS
JUNCTIONS
LASER RADIATION
LASERS
LEAKAGE CURRENT
P-N JUNCTIONS
PERFORMANCE
PHYSICAL PROPERTIES
RADIATIONS
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
THYRISTORS
TRANSISTORS
WAVELENGTHS