Radiation-induced interface phenomena: Decoration of high-energy density ion tracks

Journal Article · Mon Apr 17 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101383· OSTI ID:6318290

Ingemarsson, P A; Sundqvist, B U.R.; Nieh, C W; Tombrello, T A

The effect of 20 MeV Cl/sup 4 +/ ions incident on Au-SiO/sub 2/ and Ag-SiO/sub 2/ interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO/sub 2/. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.

• Research Organization: Department of Radiation Sciences, Uppsala University, Box 535, S-751 21 Uppsala, Sweden
• OSTI ID: 6318290
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:16
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GOLD
PHYSICAL RADIATION EFFECTS
SILICA
SILVER
ADHESION
CHLORINE IONS
DIFFUSION
FILMS
MEV RANGE 10-100
NEUTRAL-PARTICLE TRANSPORT
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
CHALCOGENIDES
CHARGED PARTICLES
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
IONS
METALS
MEV RANGE
MICROSCOPY
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
RADIATION TRANSPORT
SILICON COMPOUNDS
SILICON OXIDES
TRANSITION ELEMENTS
360106* - Metals & Alloys- Radiation Effects
360605 - Materials- Radiation Effects