Zn/sub 3/P/sub 2/ as an improved semiconductor for photovoltaic solar cells. Eleventh quarterly report, March 1, 1981-May 31, 1981

Technical Report · Thu Jan 01 04:00:00 EST 1981

OSTI ID:6317526

Mg/Zn/sub 3/P/sub 2/ devices were prepared on thin Zn/sub 3/P/sub 2/ films grown on mica/Fe/Si substrates. The highest total area conversion efficiency achieved on a 1 cm/sup 2/ area cell under smulated AM-1 illumination was 4.3%. The seris resistance in the cells was less than or equal to 5 ..cap omega.. cm/sup 2/ and a fill factor as high as 57% was observed. The J/sub sc/ (approx. 17 mA/cm/sup 2/) was compared to similar devices on large grain bulk Zn/sub 3/P/sub 2/ wafers. Spectral response and laser spot scans indicate a longer electron diffusion length in these films compared to films prepared on mica/Fe/C silicon steel substrates. The series resistance in the devices decreased at higher temperatures. It appears that the back contact resistance is a major contributing factor to the total series resistance of the device. The composition of this Zn/sub 3/P/sub 2/ films grown by close-spaced vapor transport on mica substrates was determined by x-ray fluorescence analysis. Electron beam induced current (EBIC) measurements were made on a Mg/Zn/sub 3/P/sub 2/ device and the surface recombination velocity was determined to be approx. 10/sup 2/ cm/sec. Attempts were made to measure the drift mobility in bulk and thin film Zn/sub 3/P/sub 2/. Experiments are being conducted to prepare high resistivity Zn/sub 3/P/sub 2/ to see the evidence of n type conductivity by annealing in Zn at temperatures up to 925/sup 0/C. Seeded crystal growth, using a seed with (101) plane at an angle to the saw cut face resulted in a boule with 2-3 large grains. The performance of ZnO/Zn/sub 3/P/sub 2/ devices has been lower than expected. The V/sub oc/ in these devices is < 0.4 Volts and the maximum active area conversion efficiency has been approx. 2%.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6317526
• Report Number(s): SERI/PR-8062-1-T11; ON: DE81027505
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALKALINE EARTH METALS
BEAMS
CARRIER MOBILITY
CHALCOGENIDES
CHEMICAL ANALYSIS
CHEMICAL COMPOSITION
CRYSTAL GROWTH
CURRENTS
DEPLETION LAYER
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
EDDY CURRENTS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
EQUIPMENT
FILMS
HETEROJUNCTIONS
HOMOJUNCTIONS
JUNCTIONS
LAYERS
LENGTH
LEPTON BEAMS
MAGNESIUM
METALS
MOBILITY
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
X-RAY EMISSION ANALYSIS
X-RAY FLUORESCENCE ANALYSIS
ZINC COMPOUNDS
ZINC OXIDES
ZINC PHOSPHIDE SOLAR CELLS