Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Coupled magnetoelastic theory of magnetic and magnetostrictive hysteresis

Journal Article · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/20.221036· OSTI ID:6310397
 [1];  [2]
  1. Southwest Research Inst., San Antonio, TX (United States)
  2. Iowa State Univ., Ames, IA (United States). Ames Lab.

A physical model is developed for the coupling between magnetic and magnetostrictive hysteresis and for the effect of mechanical stress on both types of hysteresis. The Jiles-Atherton-Sablik model for magnetomechanical hysteresis is reviewed and interpreted. In that model, under applied stress, the magnetization is coupled to magnetostriction through the derivative of the magnetostriction with respect to magnetization. The magnetostriction is also a function of the magnetization even in the absence of stress. An expression for the magnetostriction is derived from minimization of the internal energy with respect to strains, which is necessary for mechanical equilibrium. In the case where stress [sigma]/Y, where Y is Young's modulus, and a magnetostrain which goes to zero at saturation ([Delta]E effect). From the magnetostrain, the magnetostriction is obtained, using the convention that magnetostriction is zero in the unmagnetized state. By taking into account fluctuations in the magnetic energy due to hysteresis, one finds that the magnetostriction initially moves to higher values as the magnitude of the flux density B decreases from its extremum value in [lambda] versus B plots. Various numerical cases are evaluated, and the modeling is compared to previous measurements in polycrystalline iron and steel and in terfenol and Ni-Zn ferrites.

OSTI ID:
6310397
Journal Information:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:4; ISSN IEMGAQ; ISSN 0018-9464
Country of Publication:
United States
Language:
English