Electrical characteristics of Ar-ion sputter induced defects in epitaxially grown n-GaAs
- Univ. of Pretoria (South Africa)
Epitaxially grown n-type GaAs was sputtered by bombarding it with Ar ions at energies of between 0.5 and 5 key at a dose of 10[sup 13] ions/cm[sup 2]. The fabrication of Au Schottky barrier contacts followed directly after the sputtering. The electrical characteristics of the sputter induced defects were studied using deep-level transient spectroscopy (DLTS). Several defects with discrete defect levels ranging from 0.05-0.70 eV below the conduction band, as well as defects with continuously distributed energies in the conduction band, were introduced during sputtering. Concentration depth profiling revealed that whereas some defects are located very close to the interface, others were detected several microns below the interface. The depth of some of these deep lying defects increased with sputter voltage. A possible explanation of the reduction in EL2 DLTS signal previously observed after sputtering is shown to be the sputter induced barrier height lowering. 9 refs., 4 figs., 2 tabs.
- OSTI ID:
- 6306974
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 10:6; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
SCHOTTKY DEFECTS
ELECTRICAL PROPERTIES
SPUTTERING
ARGON IONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
KEV RANGE
SCHOTTKY BARRIER DIODES
SPECTROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ENERGY RANGE
GALLIUM COMPOUNDS
INFORMATION
IONS
NUMERICAL DATA
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
VACANCIES
360606* - Other Materials- Physical Properties- (1992-)