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Title: Triethyllead tert-butoxide, a new precursor for organometallic chemical vapor deposition of lead zirconate titanate thin films

Journal Article · · Chemistry of Materials; (United States)
DOI:https://doi.org/10.1021/cm00028a009· OSTI ID:6302032
; ;  [1]; ; ; ;  [2]
  1. Philips Research Laboratories, Eindhoven (Netherlands)
  2. Billiton Research B.V., Arnhem (Netherlands)

The deposition of lead zirconate titanate (PbZr[sub x]Ti[sub 1]-[sub x]O[sub 3]) thin films by organometallic chemical vapor deposition (OMCVD) is reported using the new precursor triethyllead tert-butoxide (TELBUT) together with titanium tetra-tert-butoxide (TTB) and zirconium tetra-tert-butoxide (ZTB). TELBUT and the analogous compound triethyllead isopropoxide were synthesized and were found to be thermally stable at room temperature but decomposed when exposed to daylight; for TELBUT the photolysis products are different for the pure compound and solutions in toluene-d[sub 8]. TELBUT started to decompose exothermically around 138 [degrees]C in a differential scanning calorimeter, giving metallic lead. OMCVD experiments showed that, in the absence of additional oxygen, TELBUT gave metallic lead. Lead titanate (PbTiO[sub 3]) could be formed at temperatures between 550 and 700[degrees]C in the presence of oxygen and titanium tetraisopropoxide. Without oxygen, only lead and titanium dioxide were formed. PbZr[sub x]Ti[sub 1]-[sub x]O[sub 3] thin films were deposited using TTB, ZTB, and TELBUT in the presence of oxygen at 700 [degrees]C. Ferroelectric films with good crystallinity and high values for the polarization were obtained with the new precursor system. 26 refs., 3 figs.

OSTI ID:
6302032
Journal Information:
Chemistry of Materials; (United States), Vol. 5:4; ISSN 0897-4756
Country of Publication:
United States
Language:
English

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