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Photovoltaic applications for silicon carbon films and microcrystalline silicon films

Journal Article · · Applied Physics Communications; (USA)
OSTI ID:6301170
 [1]
  1. Solar Energy Research Institute, Golden, CO (USA)

To achieve higher sunlight conversion efficiencies for amorphous silicon photovoltaic devices, a number of approaches appear promising: (1) the use of multijunction devices instead of single junction devices, (2) the use of highly conductive and transparent p- and n-layers, and (3) the reduction of interface recombination losses. For highest efficiency, all three approaches are combined. The common element in all these three approaches is the use of silicon carbon (both amorphous or microcrystalline) and of microcrystalline silicon. These materials have received considerable attention in the past few years for use as wide bandgap i-layers, doped layers, and buffer layers between the p-layer and i-layer in p-i-n amorphous silicon devices. Composition graded buffer layers to minimize interface carrier recombination have been generally adopted by industry for single- and multi-junction amorphous silicon alloy devices. This has led to improvements of the open-circuit voltage, fill factor, and short-circuit current density. Highly conductive, low activation energy a-SiC:H:B p-layers in a-Si:H single-junction cells have resulted in the highest efficiencies recorded for single-junction amorphous silicon cells of any type. Only two research groups have demonstrated an improvement in cell efficiency using microcrystalline p-layers.

OSTI ID:
6301170
Journal Information:
Applied Physics Communications; (USA), Journal Name: Applied Physics Communications; (USA) Vol. 9:4; ISSN 0277-9374; ISSN APCOD
Country of Publication:
United States
Language:
English