Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants
A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics
- Research Organization:
- Rockwell International Corp., Canoga Park, CA (USA)
- DOE Contract Number:
- FG03-85ER45221
- Assignee:
- Dept. of Energy
- Patent Number(s):
- PATENTS-US-A7096577
- Application Number:
- ON: DE89011782
- OSTI ID:
- 6300802
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
AMMONIA
CHEMICAL REACTIONS
ELEMENTS
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
INVENTIONS
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
PARTICLE SIZE
PNICTIDES
REACTION INTERMEDIATES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SIZE
SYNTHESIS
VERY HIGH TEMPERATURE