Ion-assisted deposition of lanthanum fluoride thin films

Journal Article · Tue Sep 01 04:00:00 EDT 1987 · Appl. Opt.; (United States)

DOI:https://doi.org/10.1364/AO.26.003733· OSTI ID:6292915

Targove, J D; Lehan, J P; Lingg, L J; Macleod, H A; Leavitt, J A; McIntyre, Jr, L C

Ion-assisted deposition has been used to deposit lanthanum fluoride thin films with near-unity film packing densities and no significant increase in absorption. Rutherford backscattering analysis has determined the effect of ion bombardment on the film stoichiometries including the degree of fluorine deficiency. Oxygen atoms or compounds appear to occupy most of the available anion vacancies if sufficient oxygen is available in the ion beam or the residual atmosphere.

• Research Organization: University of Arizona, Tucson, Arizona 85721
• OSTI ID: 6292915
• Journal Information: Appl. Opt.; (United States), Journal Name: Appl. Opt.; (United States) Vol. 26:17; ISSN APOPA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
BEAMS
CHARGED PARTICLES
DEPOSITION
ENERGY BEAM DEPOSITION
FILMS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
ION BEAMS
IONS
LANTHANUM COMPOUNDS
LANTHANUM FLUORIDES
LASL
NATIONAL ORGANIZATIONS
OXYGEN IONS
RARE EARTH COMPOUNDS
SPUTTERING
SURFACE COATING
THIN FILMS
US AEC
US DOE
US ERDA
US ORGANIZATIONS