Amphoteric native defects in semiconductors

Journal Article · Mon May 22 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101174· OSTI ID:6291782

Walukiewicz, W

We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping-induced superlattice intermixing, and limits of free-carrier concentration find for the first time a common simple explanation.

• Research Organization: Center for Advanced Materials, Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6291782
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ENERGY LEVELS
FERMI LEVEL
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MATERIALS
MIXING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THIN FILMS