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Tests of the radiation hardness of VLSI Integrated Circuits and Silicon Strip Detectors for the SSC (Superconducting Super Collider) under neutron, proton, and gamma irradiation

Conference ·
OSTI ID:6288430
; ;  [1]; ; ; ; ; ; ; ; ; ; ;  [2];  [3];  [4];
  1. Los Alamos National Lab., NM (USA)
  2. California Univ., Santa Cruz, CA (USA). Inst. for Particle Physics
  3. California Univ., Riverside, CA (USA)
  4. Missouri Univ., Rolla, MO (USA)

As part of a program to develop a silicon strip central tracking detector system for the Superconducting Super Collider (SSC) we are studying the effects of radiation damage in silicon detectors and their associated front-end readout electronics. We report on the results of neutron and proton irradiations at the Los Alamos National Laboratory (LANL) and {gamma}-ray irradiations at UC Santa Cruz (UCSC). Individual components on single-sided AC-coupled silicon strip detectors and on test structures were tested. Circuits fabricated in a radiation hard CMOS process and individual transistors fabricated using dielectric isolation bipolar technology were also studied. Results indicate that a silicon strip tracking detector system should have a lifetime of at least one decade at the SSC. 17 refs., 17 figs.

Research Organization:
Los Alamos National Lab., NM (USA)
Sponsoring Organization:
DOE/AD
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
6288430
Report Number(s):
LA-UR-90-4184; CONF-9010220--19; ON: DE91005896
Country of Publication:
United States
Language:
English