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High-power, diffraction-limited, narrow-band, external-cavity diode laser

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101273· OSTI ID:6287318
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We demonstrate an external-cavity GaAs/GaAlAs single quantum well diode laser that produces 1.6 W of cw power with 32% overall efficiency in a spectral band of 0.02 nm. Over 0.1 W is measured in a single-frequency, diffraction-limited beam.

Research Organization:
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, Massachusetts 02173-0073
OSTI ID:
6287318
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:18; ISSN APPLA
Country of Publication:
United States
Language:
English

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Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EFFICIENCY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASER CAVITIES
LASERS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
POWER RANGE 1-10 W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TUNING