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Title: Sputter deposition with nearly-parallel coating flux

Abstract

A method for producing a dense, nearly-parallel flux of sputtered atoms is described. This method allows sputter depositing films having substantially 100% of theoretical density. The sputtering chamber contains a target having a surface that is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the target surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about .65 Pa to limit scattering and permit line-of-sight deposition. The angles of incidence of the particles impinging upon the substrate surface do not vary greatly even when the target surface area is greatly expanded to increase the deposition rate. An experimental sputtering system is described. Deposition rates are given as a function of distance from the target edge and distance from the target plane. Metallography of sputter deposited Ni is presented.

Authors:
; ; ;
Publication Date:
Research Org.:
Battelle Pacific Northwest Labs., Richland, WA (USA)
OSTI Identifier:
6271940
Report Number(s):
PNL-SA-8969A
ON: DE81030107; TRN: 81-016074
DOE Contract Number:
AC06-76RL01830
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COATINGS; DEPOSITION; SURFACE COATING; SPUTTERING; COPPER; NICKEL; STAINLESS STEEL-316; VACUUM SYSTEMS; ALLOYS; CHROMIUM ALLOYS; CHROMIUM STEELS; CHROMIUM-NICKEL STEELS; CORROSION RESISTANT ALLOYS; ELEMENTS; HEAT RESISTANT MATERIALS; HEAT RESISTING ALLOYS; IRON ALLOYS; IRON BASE ALLOYS; MATERIALS; METALS; MOLYBDENUM ALLOYS; NICKEL ALLOYS; STAINLESS STEELS; STEELS; TRANSITION ELEMENTS; 360101* - Metals & Alloys- Preparation & Fabrication

Citation Formats

Patten, J.W., McClanahan, E.D., Moss, R.W., and Bayne, M.A.. Sputter deposition with nearly-parallel coating flux. United States: N. p., 1981. Web.
Patten, J.W., McClanahan, E.D., Moss, R.W., & Bayne, M.A.. Sputter deposition with nearly-parallel coating flux. United States.
Patten, J.W., McClanahan, E.D., Moss, R.W., and Bayne, M.A.. 1981. "Sputter deposition with nearly-parallel coating flux". United States. doi:.
@article{osti_6271940,
title = {Sputter deposition with nearly-parallel coating flux},
author = {Patten, J.W. and McClanahan, E.D. and Moss, R.W. and Bayne, M.A.},
abstractNote = {A method for producing a dense, nearly-parallel flux of sputtered atoms is described. This method allows sputter depositing films having substantially 100% of theoretical density. The sputtering chamber contains a target having a surface that is substantially parallel to the direction of the particles impinging upon the substrate surface, the distance between the most remote portion of the substrate surface receiving the particles and the target surface emitting the particles in a direction parallel to the substrate surface being relatively small. The pressure in the vessel is maintained less than about .65 Pa to limit scattering and permit line-of-sight deposition. The angles of incidence of the particles impinging upon the substrate surface do not vary greatly even when the target surface area is greatly expanded to increase the deposition rate. An experimental sputtering system is described. Deposition rates are given as a function of distance from the target edge and distance from the target plane. Metallography of sputter deposited Ni is presented.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 1981,
month = 4
}

Technical Report:
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