Silicon carbides and diamond semiconductor thin films: Growth, defect analysis, and device development

Journal Article · Thu Jul 01 00:00:00 EDT 1993 · American Ceramic Society Bulletin; (United States)

OSTI ID:6270935

Davis, R F ^[1]

---

1. North Carolina State Univ., Raleigh, NC (United States)

Materials research on diamond and SiC as it pertains to microelectronics and optoelectronics has recently increased. A small number of commercial products have resulted. However, additional studies must be conducted to achieve the full potential of these materials. Future directions for research to overcome these problems are described.

• OSTI ID: 6270935
• Journal Information: American Ceramic Society Bulletin; (United States), Vol. 72:7; ISSN 0002-7812
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DIAMONDS
RESEARCH PROGRAMS
SILICON CARBIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
DEPOSITION
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
FABRICATION
MICROELECTRONICS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SUBSTRATES
SYNTHESIS
THIN FILMS
CARBIDES
CARBON
CARBON COMPOUNDS
CRYSTAL STRUCTURE
ELEMENTAL MINERALS
ELEMENTS
FILMS
MICROSCOPY
MINERALS
NONMETALS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SILICON COMPOUNDS
360600* - Other Materials
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)