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Stacking fault energy in sapphire (x-Al/sub 2/O/sub 3/)

Journal Article · · Acta Metall.; (United States)
Stacking faults associated with climb-dissociated basal and prism plane dislocations after plastic deformation at elevated temperatures have been studied. In both cases, the fault vector is 1/3 <1010> and only the cation sublattice is faulted. The fault energy on (1010) and (1120) planes are between 0.1 and 0.25 J/m/sup 2/. One vacancy and two interstitial faults are possible in this structure; one of the interstitial faults, has the lowest energy.
Research Organization:
Department of Metallurgy and Materials Science, Case Institute of Technology. Case Western Reserve University, Cleveland, OH
OSTI ID:
6267620
Journal Information:
Acta Metall.; (United States), Journal Name: Acta Metall.; (United States) Vol. 32:1; ISSN AMETA
Country of Publication:
United States
Language:
English