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U.S. Department of Energy
Office of Scientific and Technical Information

Point defects in crystals (including grouped defects). Report No. 4548

Technical Report ·
OSTI ID:6263339

The fundamental properties of point defects, vacancies and self-interstitial atoms, in pure fcc and bcc metals is reviewed. Point defects created by both thermally-activated and irradiation processes are considered. The roles played by vacancies and self-interstitial atoms in thermal equilibrium are discussed and the best values of the enthalpy of formation of these point defects, in a number of metals, are given. Methods for obtaining fundamental properties of vacancies, such as activation volumes, mobilities, and binding enthalpies are discussed. Selected best values of mobilities and binding enthalpies of vacancies, as deduced from recovery experiments on a number of different quenched metals are listed. The problem of the production of single self-interstitial atoms and their configuration(s) is discussed. The clustering of single self-interstitials into small clusters is also considered. The physical origin of the extremely high low-temperature mobility of self-interstitials in the so-called Stage I recovery regime is also discussed.

Research Organization:
Cornell Univ., Ithaca, NY (USA)
DOE Contract Number:
AS02-76ER03158
OSTI ID:
6263339
Report Number(s):
DOE/ER/03158-97; ON: DE82000395
Country of Publication:
United States
Language:
English