Semiconductor laser device
A semiconductor laser device has stabilized longitudinal and transverse modes without excess optical noise for a modulated signal generated by mode interaction. The fundamental construction of the semiconductor laser device comprises a structure wherein a first semiconductor layer is sandwiched between second and third semiconductor layers which have a greater band gap and lower index of refraction than the first semiconductor layer. That region of at least one of the second and third semiconductor layers which is remote from the first semiconductor layer corresponds substantially to a radiation region and serves as a light non-absorptive region in the shape of a stripe. A semiconductor layer has portions lying on both sides of the semiconductor layer remote from the first semiconductor layer and has an effective complex refractive-index for laser light discontinuous at both ends of the semiconductor layer remote from the first semiconductor layer. Periodic corrugations which interng of the chosen buffer gases and the chosen metal dihalide vapor is ionized by ; the total economic market potential is 64.4% of the technical potential, or 2072.4 MW, equivalent to 83,621 BPDE; and the lack of an operating history-detailing system reliability, safety, and operating costs-iment and test components; technology testing; analytmperature fatigue stren obtained.
- Assignee:
- Hitachi Ltd (Japan)
- Patent Number(s):
- US 4257011
- OSTI ID:
- 6259661
- Resource Relation:
- Patent Priority Date: Priority date 1 Aug 1977, Japan
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
DESIGN
FABRICATION
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
OPTICAL MODES
REFRACTIVITY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
LASERS
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)