Pressure dependence of deep electronic levels in semiconductors: Phosphorus-vacancy pair (or Si /ital E/ center) and divacancy in silicon
The effects of hydrostatic pressure on the electron thermal emission ratesand capture cross sections of three deep electronic levels in phosphorus-dopedsilicon were investigated. Included were the /ital E//sub /ital c///minus/0.44 eVacceptor associated with the phosphorus-vacancy pair defect (or Si /ital E/center), the /ital E//sub /ital c///minus/0.23 eV acceptor associated with the 2/minus///minus/ charge state of the divacancy, and a level of uncertain origin at/ital E//sub /ital c///minus/0.40 eV. The results allow determination of the shiftof the energies of these levels with pressure and of the breathing-mode latticerelaxations which accompany electron emission and capture by these levels. Thisis the first determination of these properties. For the phosphorus-vacancyacceptor, pressure shifts the level deeper into the band gap, and an outward(inward) volume relaxation accompanies electron emission (capture). Theseresults can be qualitatively understood in terms of the accepted model for thisdefect and the bondinglike nature of its level. Qualitatively similar resultsare obtained for the /ital E//sub /ital c///minus/0.40 eV level, but oppositeeffects are seen for the divacancy level. Specifically, with pressure, thislatter level moves higher in the band gap, and the lattice relaxes inward(outward) on electron emission (capture). These results can also be understoodin terms of the accepted model for the defect and the antibondinglike nature ofits level.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185(US)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6257534
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Vol. 39:17
- Country of Publication:
- United States
- Language:
- English
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