Carrier-collection efficiencies in amorphous hydrogenated silicon Schottky-barrier solar cells
We report the results of a systematic study of correlations in the collection efficiency, collection length, depletion width, midgap density of states and energy-band gap in sputter and silane-decomposition-produced amorphous hydrogenated silicon Schottky diodes. Films produced by sputtering have a collection length L/sub c/, which is less than the depletion width W, unlike silane-decomposition-produced films for which L/sub c/approx. =W. We show that the relatively weak variation of the deduced hole-mobility-lifetime product with midgap state density and temperature is consistent with the holes becoming immobilized before recombining. The collection efficiency is found to be controlled dominantly by the field-assisted diffusion of carriers in the depletion region, and not limited by geminate recombination.
- Research Organization:
- Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
- DOE Contract Number:
- XW-0-9358-1; EG-77-C-01-4042
- OSTI ID:
- 6256512
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 52:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SCHOTTKY BARRIER SOLAR CELLS
CHARGE COLLECTION
EFFICIENCY
SILICON SOLAR CELLS
AMORPHOUS STATE
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CORRELATIONS
DATA
DECOMPOSITION
ENERGY GAP
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
HYDROGEN
LIFETIME
MATHEMATICAL MODELS
MOBILITY
SILANES
SILICON
SPUTTERING
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
NONMETALS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion