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Photopumped phonon-assisted laser operation (77 K) of In/sub 0. 5/(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub 0. 5/P quantum well heterostructures

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.101067· OSTI ID:6252693
The photopumped phonon-assisted laser operation (612 nm, 77 K) of a high-gapIn/sub 1/minus//ital y//(Al/sub /ital x//Ga/sub 1/minus//ital x//)/sub /ital y//P quantum wellheterostructure (QWH) lattice matched to GaAs (/ital y/approx.0.5) is identified usinga single rectangular sample that is shifted in its heat sinking from (a) low/ital Q/ when clamped onto Au (bare edges) to (b) high /ital Q/ when furthercompressed into Au with all four edges reflecting. For the low-/ital Q/ QWH samplephotopumped in a spot (partially photopumped), phonon-assisted laser operation(abrupt threshold, narrow spectrum) is observed on closely spaced end-to-endlaser modes ..delta../ital E/=/h bar/..omega../sub LO/approx.45--47 meV below the lowestconfined-particle transitions. For the /ital same/ sample shifted tohigh /ital Q/, edge-to-edge laser operation across the sample on confined-particletransitions is ''turned on'' also, thus providing an unambiguous experimentalreference (/h bar/..omega../sub LO/approx.45--47 meV) for the phonon sideband.
Research Organization:
Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at UrbanaChampaign, Urbana, Illinois 61801(US); Hewlett Packard Optoelectronics Division, San Jose, California 95131
OSTI ID:
6252693
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:24; ISSN APPLA
Country of Publication:
United States
Language:
English