Narrow linewidth 1. 5. mu. m semiconductor laser with a resonant optical reflector
Journal Article
·
· Appl. Phys. Lett.; (United States)
A compact narrow linewidth semiconductor laser is described. An emission linewidth of 135 kHz at 5 mW of output power is obtained from a 1.5-..mu..m semiconductor laser butt coupled to an external resonant optical reflector (ROR). The ROR, made with dielectric waveguides on silicon substrate, has transmission and reflection bandwidths as narrow as 0.35 A.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6249406
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:15; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
COUPLING
DATA
DESIGN
ELEMENTS
EXPERIMENTAL DATA
INFORMATION
LASER CAVITIES
LASERS
LIGHT TRANSMISSION
LINE WIDTHS
NUMERICAL DATA
OPTICAL REFLECTION
PERFORMANCE
POWER
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
WAVEGUIDES
420300* -- Engineering-- Lasers-- (-1989)
COUPLING
DATA
DESIGN
ELEMENTS
EXPERIMENTAL DATA
INFORMATION
LASER CAVITIES
LASERS
LIGHT TRANSMISSION
LINE WIDTHS
NUMERICAL DATA
OPTICAL REFLECTION
PERFORMANCE
POWER
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
WAVEGUIDES