Atomistic studies of segregation and diffusion in Al-Cu grain boundaries

Journal Article · Sat Feb 28 23:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.121120· OSTI ID:624842

Liu, X ^[1]; Xu, W ^[2]; Foiles, S M ^[3]; Adams, J B ^[4]

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1. Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois61801 (United States)
2. Lawrence Livermore National Laboratory, University of California, Livermore, California94551 (United States)
3. Sandia National Laboratories, Livermore, California94550 (United States)
4. Department of Chemical, Bio. and Materials, Arizona State University, Tempe, Arizona85287-6006 (United States)

The segregation of Cu atoms at Al [110] {Sigma}11 and [001] {Sigma}5 tilt grain boundaries was studied. Cu atoms were found to segregate to asymmetric sites at the {Sigma}11 boundary and form zig-zag planar aggregates at the interface. Segregation is dominated by atomic size and local hydrostatic stress. Cu atoms prefer to occupy the prime diffusion path sites at both grain boundaries. Cu segregation raises the vacancy formation and diffusion activation energies at {Sigma}11 grain boundaries, thus slowing the rate of atomic diffusion. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 624842
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 72; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM ALLOYS
COPPER
COPPER ALLOYS
DIFFUSION
GRAIN BOUNDARIES
SEGREGATION
STRAINS
THIN FILMS
VACANCIES