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Oxygen induced dissolution and segregation of silicon in platinum single crystals

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.571093· OSTI ID:6246038
The segregation of silicon in platinum flat (111), stepped (553) and (332) surfaces is studied as a function of crystal temperature. Silicon segregates below 1000/sup 0/C with a segregation energy between 17 and 20 kcal/mol. In the retarding field mode, the maximum amount of segregated Si corresponds to a Si (93 eV)/Pt (242 eV) Auger peak ratio of about 5. In the presence of O/sub 2/, Si dissolves into the bulk at T> or approx. =600/sup 0/C. The rate of Si dissolution increases with O/sub 2/ pressure and crystal temperatures. At an O/sub 2/ pressure of 5 x 10/sup -7/ Torr, the activation energy for the dissolution process is 16 +- 2 kcal/mol. Continued exposure to O/sub 2/ results in the reappearance of Si at the Pt surface as a new phase, SiO/sub x/, characterized by Auger peaks of Si (84 eV) and O (515 eV).
Research Organization:
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, and Department of Chemistry, University of California, Berkeley, California 94720
OSTI ID:
6246038
Journal Information:
J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 19:3; ISSN JVSTA
Country of Publication:
United States
Language:
English