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Title: Kinetic energy dependence of dissociative charge--transfer reactions of He sup + , Ne sup + , Ar sup + , Kr sup + , and Xe sup + with silane

Journal Article · · Journal of Chemical Physics; (USA)
DOI:https://doi.org/10.1063/1.458675· OSTI ID:6234052
;  [1]
  1. Department of Chemistry, University of Utah, Salt Lake City, UT (USA)

Guided ion-beam techniques are used to measure the cross sections as a function of kinetic energy for reaction of SiH{sub 4} with He{sup +}, Ne{sup +}, Ar{sup +}, Kr{sup +}, and Xe{sup +}. State-specific data for the {sup 2}{ital P}{sub 3/2} ground spin--orbit states of Kr{sup +} and Xe{sup +} are also obtained. The products observed in the He, Ar, and Kr systems are SiH{sup +}{sub {ital x}} for {ital x}=0--3. For the Ne system, formation of SiH{sup +}{sub {ital x}} {ital x} = 0--2, is seen, while in the Xe system only SiH{sup +}{sub 3} and SiH{sup +}{sub 2} are observed. Reactions of He{sup +}, Ne{sup +}, Kr{sup +}, and Xe{sup +} show little dependence on kinetic energy, but for the case of Ar{sup +}, the reaction probability and the product distribution are highly sensitive to the kinetic energy of the system. Thermal reaction rates for all of the reactions are derived and compared with previous measurements. The results for these reactions are explained in terms of vertical ionization from the 1{ital t}{sub 2} and 3{ital a}{sub 1} bands of SiH{sub 4}. The relationships of these reactions to plasma deposition and etching are also discussed.

OSTI ID:
6234052
Journal Information:
Journal of Chemical Physics; (USA), Vol. 93:7; ISSN 0021-9606
Country of Publication:
United States
Language:
English