Influence of ion bombardment on the distribution of impurities in thin tantalum films

Journal Article · Mon Dec 01 04:00:00 EST 1980 · Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States)

OSTI ID:6233082

Belyi, I M; Komarov, F F; Moroshkin, N V

Tantalum films of thickness approx.0.1..mu.., deposited by ion-plasma sputtering in a vacuum of 1.10/sup -6/ torr on Be substrates, were irradiated with N/sup +//sub 2/, O/sup +//sub 2/ and Ne/sup +/ ions with doses in the range 10/sup -16/-4.10/sup 17/ ion/cm/sup 2/ at an energy of 60 keV. The distribution of impurities in initial and irradiated films was deduced from the Rutherford backscattering (RB) of 1.4-MeV /sup 4/He/sup +/ ions. Strong contamination of the surface layer of carbon atoms was observed. The distribution of implanted impurities was found not to deviate significantly from a Gaussian. With large irradiation doses (>10/sup 17/ ion/cm/sup 2/) a stoichiometric concentration of impurities is established, described by the oxycarbonitride formula TaO/sub x/C/sub y/N/sub z/ where x+y+zapprox. =1. The analysis of RB spectra in the case of multicomponent thin films of variable composition is discussed.

• Research Organization: Scientific-Research Institute for Applied Physical Problems at the V. I. Lenin Belorussian State University
• OSTI ID: 6233082
• Journal Information: Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States) Vol. 25:12; ISSN SPTPA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
BACKSCATTERING
CHARGED PARTICLES
COLLISIONS
ELASTIC SCATTERING
ELEMENTS
ENERGY RANGE
FILMS
IMPURITIES
ION COLLISIONS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
METALS
NEON IONS
NITROGEN IONS
OXYGEN IONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
REFRACTORY METALS
RUTHERFORD SCATTERING
SCATTERING
TANTALUM
TRANSITION ELEMENTS