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Development of a radiation hardened polymer dielectric by chemical doping

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
X-ray induced photoconductivity measurements reveal that the radiation-induced conductivity of polyethylene terepthalate films is greatly reduced by doping this polymer with 2,4,6-trinitrofluorenone which acts as a deep trap for the photocarriers. The radiation-induced conductivity of this doped dielectric is reduced to 1 percent of the value for the undoped material and is lower than that observed in commercial polymer films we have studied. The preparation and dielectric properties of the doped films are described.
Research Organization:
Sandia National Lab., Albuquerque, NM
OSTI ID:
6231183
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-30; ISSN IETNA
Country of Publication:
United States
Language:
English