Ion-beam-induced metal-insulator transition in YBa/sub 2/Cu/sub 3/O/sub 7/minus/delta/: A mobility edge

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.39.11599· OSTI ID:6225382

White, A E; Short, K T; Dynes, R C; Garno, J P; Levi, A F. J.; Anzlowar, M; Baldwin, K

We have studied the temperature-dependent resistivity and Hall coefficient of epitaxial YBa/sub 2/Cu/sub 3/O/sub 7/minus/delta/ films as a function of ion-beam-induced damage. At low ion fluences the films behave like typical metals above the superconducting transition. At higher ion fluences, the material goes continuously through the metal-insulator transition with a resistivity that varies like exp(/ital T//sup /minus/1/2/) but with a Hall coefficient that changes very little. This implies that the transition is a result of a reduction in mobility rather than a drop in carrier density.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974(US)
• OSTI ID: 6225382
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 39:16, Issue 16
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
PHYSICAL RADIATION EFFECTS
COPPER OXIDES
YTTRIUM OXIDES
ELECTRIC CONDUCTIVITY
ELECTRICAL INSULATORS
EPITAXY
FILMS
HALL EFFECT
ION COLLISIONS
METALS
MEV RANGE 01-10
MOBILITY
NEON IONS
PHASE TRANSFORMATIONS
TEMPERATURE DEPENDENCE
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
COPPER COMPOUNDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY RANGE
EQUIPMENT
IONS
MEV RANGE
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
360206* - Ceramics
Cermets
& Refractories- Radiation Effects