Plastic deformation mechanisms in SiC-whisker-reinforced alumina
- Univ. de Sevilla (Spain)
SiC-whisker-reinforced Al[sub 2]O[sub 3] samples (SiC[sub w]/Al[sub 2]O[sub 3]), obtained from three different manufacturers, containing 0-30 vol% SiC have been crept under compression at 1,400 C in flowing argon. Compressive creep tests and microstructural observations have been used to characterize the plastic deformation mechanisms. The presence of whiskers decreased the creep rate by reducing grain-boundary sliding. Damage formation was increased, however, because the whiskers acted as stress concentration sites. For specimens with whisker loadings greater than 15%, the absolute creep rate was not strongly dependent on whisker concentration, and the formation of cavitation damage was negligible below a critical stress that depended on the fabrication procedure of the specimen. This creep regime was characterized by a stress exponent of approximately 1, in which deformation occurred primarily by diffusional flow. For the materials with less SiC, the deformation occurred primarily by grain boundary sliding.
- OSTI ID:
- 6210658
- Journal Information:
- Journal of the American Ceramic Society; (United States), Journal Name: Journal of the American Ceramic Society; (United States) Vol. 76:6; ISSN 0002-7820; ISSN JACTAW
- Country of Publication:
- United States
- Language:
- English
Similar Records
Creep of an A1{sub 2}O{sub 3}-SiC(whisker)-TiC(particle) composite.
Microstructural constraints for creep in SiC-whisker-reinforced A1203.
Related Subjects
360603* -- Materials-- Properties
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
COMPOSITE MATERIALS
COMPRESSION
CREEP
CRYSTAL STRUCTURE
CRYSTALS
DATA
DEFORMATION
EXPERIMENTAL DATA
GRAIN BOUNDARIES
INFORMATION
MATERIALS
MECHANICAL PROPERTIES
MICROSTRUCTURE
MONOCRYSTALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PLASTICITY
SILICON CARBIDES
SILICON COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
WHISKERS