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Resolution analyses for Moessbauer diffraction: resolved TDS profiles in silicon

Journal Article · · Appl. Phys. Commun.; (United States)
OSTI ID:6202464
The thermal diffuse scattering near the 444 reflection in silicon has been studied using high intensity Moessbauer radiation from the 46.68 keV transition in /sup 183/W. The improvement in momentum resolution over earlier Moessbauer scattering studies has allowed observation of the directional dependence of the thermal diffuse scattering. These measurements have given motivation for the first resolution function analyses appropriate for the Moessbauer diffraction. The measured momentum resolution half widths were 0.011 A/sup -1/ and 0.11 A/sup -1/ in the transverse and longitudinal directions, and the vertical resolution was 1.13 A/sup -1/. The broad distribution of inelastic scattering seen is in agreement with calculations based on elastic constants and the resolution function analyses.
Research Organization:
Univ. of Missouri, Columbia
DOE Contract Number:
FG02-85ER45199; FG02-85ER45200
OSTI ID:
6202464
Journal Information:
Appl. Phys. Commun.; (United States), Journal Name: Appl. Phys. Commun.; (United States) Vol. 7:1-2; ISSN APCOD
Country of Publication:
United States
Language:
English