Cubic boron nitride preparation

Patent · Tue Jul 28 04:00:00 EDT 1987

OSTI ID:6198662

Melton, C W; Thompson, D G; Vassamillet, L F; Wickersham, C E

A method is described for deposition of cubic boron nitride on a substrate, which method comprises the steps of: (a) supporting a substrate on an rf biased electrode in a near vacuum at a base pressure below approximately 30 x 10/sup -6/ torr where oxygen levels in deposited coatings are restricted to below 20 atomic percent, (b) heating the substrate to at least 130/sup 0/C, (c) introducing a noble gas to a partial pressure not exceeding 20 x 10/sup -3/ torr; (d) introducing nitrogen to a partial pressure not exceeding 5 x 10/sup -3/ torr, (e) cathodically sputtering a BN source, (f) during cathodic sputtering of the BN source, cathodically sputtering a metal dopant source consisting of a metal selected from Groups IA, IVA, VA, VIIA, IB, IIB, IIIB, IVB, and VB of the periodic table such that dopant is deposited at less than 1.5 atomic percent. A cubic boron nitride coating is deposited on the substrate.

• Assignee: Battelle Development Corp., Columbus, OH
• Patent Number(s): US 4683043
• OSTI ID: 6198662
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
BORON COMPOUNDS
BORON NITRIDES
CATHODE SPUTTERING
CHEMICAL PREPARATION
COATINGS
DEPOSITION
DOPED MATERIALS
ELECTRODEPOSITED COATINGS
ELECTRODEPOSITION
ELECTRODES
ELECTROLYSIS
ELEMENTS
FLUIDS
GASES
HEATING
HIGH TEMPERATURE
HIGH VACUUM
LYSIS
MATERIALS
METALS
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
OXYGEN
PARTIAL PRESSURE
PNICTIDES
QUANTITY RATIO
RARE GASES
RF SYSTEMS
SPUTTERING
SUBSTRATES
SURFACE COATING
SYNTHESIS