Fabrication and testing of optics for EUV projection lithography

Conference · Wed Sep 16 04:00:00 EDT 1998

OSTI ID:6198

Hudyma, R M ^[1]; Sommargren, G E; Sweeney, D W; Taylor, J S

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1. LLNL

Extreme Ultraviolet Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the next generation of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to Deep UV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1µm features has been well-established using small- field EUVL printing tools, and development efforts are currently underway to demonstrate that cost- effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. The goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA
• Sponsoring Organization: USDOE Office of Defense Programs (DP)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6198
• Report Number(s): UCRL-JC-128290--REV-2; WFO; ON: DE00006198
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
Extreme Ultraviolet Radiation
Fabrication
Microelectronic Circuits
Optical Systems
Optics
Testing