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Title: Amorphous silicon research project government/industry program

Technical Report ·
OSTI ID:6194339

This summary report covers that the second DOE/SERI three-year amorphous silicon initiative (1987--1989). Increased performance of amorphous silicon cells has resulted as a result of progress in the areas of light (photon) management and device structure. An improved utilization of the solar spectrum has resulted from developing textured transparent conducting oxide contacts and multilayer back reflectors, which have enhanced the light trapping in cells. For example, researchers developed a high-conductivity, textured SnO{sub 2}:F front contact deposited by atmospheric-pressure chemical vapor deposition on glass; the sheet resistance is low (8--10 {Omega}/square) and the optical transmittance is high (over 80% over the wavelength range 450--700 nm). Subsequently, researchers developed a textured ZnO front contact with an optical transmittance over a wider range than that of SnO{sub 2}:F. Reactors also developed highly reflective indium tin oxide (ITO)/aluminum and ZnO/Al or ZnO/Ag multilayer back reflectors that result in enhanced quantum efficiencies for a-SiGe:H(F) of up to 67% at 700 nm. Notable efficiencies were achieved for all-amorphous-silicon alloy, two-terminal, different-band-gap multijunction devices. Efficiencies for two-terminal, same-band-gap, multijunction 0.25-cm{sup 2} cells and 900-cm{sup 2} submodules were also improved, as were the efficiencies for four-terminal, 4-cm{sup 2} cells and 900-cm{sup 2} submodules.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6194339
Report Number(s):
SERI/TP-211-3933; ON: DE90000376
Country of Publication:
United States
Language:
English