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Title: Energy spectra of shallow donors and acceptors in GaAs/sub 1-x/Al/sub x/As superlattices

Conference ·
OSTI ID:6183694

The energy spectra of shallow donors and acceptors in GaAs-Ga/sub 1-x/Al/sub x/As quantum-well structures have been calculated. The binding energies of the impurities were obtained within a variational calculation in the effective-mass approximation. Calculations were performed for various types of impurity as functions of the position of the impurity in a GaAs quantum well of infinite depth and for various slab thicknesses. The effect of the spatially dependent screening is modeled with a function of the form epsilon/sup -1/(r) = epsilon/sub 0//sup -1/ + (1 - epsilon/sub 0//sup -1/) e/sup -r/a/, with a screening parameter a approx. =1.1 a.u. characteristic of bulk GaAs. Results are compared with Bastard's theory, which is based on a constant epsilon/sub 0/ screening, and it is found that spatially dependent screening effects can be quite important for all acceptors in GaAs quantum wells over a large range of slab thicknesses. Calculated results with improved statistics are in quantitative agreement with experimental data.

Research Organization:
Lawrence Berkeley Lab., CA (USA); Universidade Estadual de Campinas (Brazil). Inst. de Fisica
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6183694
Report Number(s):
LBL-23492; CONF-870276-2; ON: DE87014120
Resource Relation:
Conference: 3. Brazilian school of semiconductor physics, Campinas, Brazil, 16 Feb 1987; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English