Observations of barrier recombination in GaAs-AlGaAs quantum well structures

Journal Article · Mon May 29 00:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101129· OSTI ID:6179385

Blood, P; Tsui, E S; Fletcher, E D

Using laser structures with a window in the contact stripe, we have observed recombination from the wells and barrier regions of GaAs-AlGaAs quantum well lasers. The magnitude of the ratio of emission intensities from the barrier and the well, and the dependence of this ratio upon injection current, are in good agreement with a calculation in which the carrier populations in well and barrier are in thermal equilibrium at the lattice temperature (300 K).

• Research Organization: Philips Research Laboratories, Redhill, Surrey RH1 5HA, England
• OSTI ID: 6179385
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 54:22
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
ELECTROLUMINESCENCE
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
LAYERS
OPERATION
PERFORMANCE
RECOMBINATION
THIN FILMS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
FILMS
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)