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Theoretical study of the heats of formation of SiH/sub n/, SiCl/sub n/, and SiH/sub n/Cl/sub n/ compounds

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100267a046· OSTI ID:6177498
Energies from ab initio electronic structure calculations, combined with empirically derived bond correction factors for Si-H and Si-Cl bonds, have been used to derive a consistent set of heats of formation for the complete set of SiH/sub n/, SiCl/sub n/ (n less than or equal to 4), and SiH/sub n/Cl/sub m/ (n + m less than or equal to 4) species. The derived values are generally in agreement with literature values. However, some changes in currently accepted heats of formation are recommended. 93 references, 4 figures, 5 tables.
Research Organization:
Sandia National Lab., Albuquerque, NM
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6177498
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 89:21; ISSN JPCHA
Country of Publication:
United States
Language:
English