STM measurements of the interaction of vacancies and steps during low-energy-ion bombardment of Si(001)
Technical Report
·
OSTI ID:61717
We create mobile surface vacancies on vicinal Si(001) by bombarding the surface with 300 eV Xe ions at a substrate temperature of 465{degrees}C. The vacancies preferentially annihilate at the rough steps retracting them with respect to their smooth neighbors. This process leads to a bimodal terrace width distribution. The retraction of the rough steps due to the vacancy annihilation is in competition with the healing process by which the surface tries to maintain its equilibrium configuration of equally spaced steps. As the two competing processes balance, the surface reaches steady state and subsequent removal of surface atoms is manifest as simple step flow.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 61717
- Report Number(s):
- SAND--95-0594; ON: DE95010935
- Country of Publication:
- United States
- Language:
- English
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